Details

Autor(en) / Beteiligte

• Sun, Minglei
• Chou, Jyh-Pin
• Ren, Qingqiang
• Zhao, Yiming
• Yu, Jin
• Tang, Wencheng

Titel

Tunable Schottky barrier in van der Waals heterostructures of graphene and g-GaN

Ist Teil von

• Applied physics letters, 2017-04, Vol.110 (17)

Ort / Verlag

Melville: American Institute of Physics

Erscheinungsjahr

2017

Link zum Volltext

Quelle

AIP Journals Complete

Beschreibungen/Notizen

• Using first-principles calculations, we systematically investigated the electronic properties of graphene/g-GaN van der Waals (vdW) heterostructures. We discovered that the Dirac cone of graphene could be quite well preserved in the vdW heterostructures. Moreover, a transition from an n-type to p-type Schottky contact at the graphene/g-GaN interface was induced with a decreased interlayer distance from 4.5 to 2.5 Å. This relationship is expected to enable effective control of the Schottky barrier, which is an important development in the design of Schottky devices.