Details

Autor(en) / Beteiligte

• Liang, Jun
• Lin, Qinxian
• Li, Hao
• Su, Yantao
• Yang, Xiaoyang
• Wu, Zhongzhen
• Zheng, Jiaxin
• Wang, Xinwei
• Lin, Yuan
• Pan, Feng

Titel

Rectification and tunneling effects enabled by Al2O3 atomic layer deposited on back contact of CdTe solar cells

Ist Teil von

• Applied physics letters, 2015-07, Vol.107 (1)

Ort / Verlag

Melville: American Institute of Physics

Erscheinungsjahr

2015

Link zum Volltext

Quelle

American Institute of Physics (AIP) Journals

Beschreibungen/Notizen

• Atomic layer deposition (ALD) of Aluminum oxide (Al2O3) is employed to optimize the back contact of thin film CdTe solar cells. Al2O3 layers with a thickness of 0.5 nm to 5 nm are tested, and an improved efficiency, up to 12.1%, is found with the 1 nm Al2O3 deposition, compared with the efficiency of 10.7% without Al2O3 modification. The performance improvement stems from the surface modification that optimizes the rectification and tunneling of back contact. The current-voltage analysis indicates that the back contact with 1 nm Al2O3 maintains large tunneling leakage current and improves the filled factor of CdTe cells through the rectification effect. XPS and capacitance-voltage electrical measurement analysis show that the ALD-Al2O3 modification layer features a desired low-density of interface state of 8 × 1010 cm−2 by estimation.