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Rectification and tunneling effects enabled by Al2O3 atomic layer deposited on back contact of CdTe solar cells
Ist Teil von
Applied physics letters, 2015-07, Vol.107 (1)
Ort / Verlag
Melville: American Institute of Physics
Erscheinungsjahr
2015
Quelle
AIP Journals Complete
Beschreibungen/Notizen
Atomic layer deposition (ALD) of Aluminum oxide (Al2O3) is employed to optimize the back contact of thin film CdTe solar cells. Al2O3 layers with a thickness of 0.5 nm to 5 nm are tested, and an improved efficiency, up to 12.1%, is found with the 1 nm Al2O3 deposition, compared with the efficiency of 10.7% without Al2O3 modification. The performance improvement stems from the surface modification that optimizes the rectification and tunneling of back contact. The current-voltage analysis indicates that the back contact with 1 nm Al2O3 maintains large tunneling leakage current and improves the filled factor of CdTe cells through the rectification effect. XPS and capacitance-voltage electrical measurement analysis show that the ALD-Al2O3 modification layer features a desired low-density of interface state of 8 × 1010 cm−2 by estimation.