Details

Autor(en) / Beteiligte

• An, Yanbin
• Behnam, Ashkan
• Pop, Eric
• Bosman, Gijs
• Ural, Ant

Titel

Forward-bias diode parameters, electronic noise, and photoresponse of graphene/silicon Schottky junctions with an interfacial native oxide layer

Ist Teil von

• Journal of applied physics, 2015-09, Vol.118 (11)

Ort / Verlag

Melville: American Institute of Physics

Erscheinungsjahr

2015

Quelle

AIP Journals Complete

Beschreibungen/Notizen

• Metal-semiconductor Schottky junction devices composed of chemical vapor deposition grown monolayer graphene on p-type silicon substrates are fabricated and characterized. Important diode parameters, such as the Schottky barrier height, ideality factor, and series resistance, are extracted from forward bias current-voltage characteristics using a previously established method modified to take into account the interfacial native oxide layer present at the graphene/silicon junction. It is found that the ideality factor can be substantially increased by the presence of the interfacial oxide layer. Furthermore, low frequency noise of graphene/silicon Schottky junctions under both forward and reverse bias is characterized. The noise is found to be 1/f dominated and the shot noise contribution is found to be negligible. The dependence of the 1/f noise on the forward and reverse current is also investigated. Finally, the photoresponse of graphene/silicon Schottky junctions is studied. The devices exhibit a peak responsivity of around 0.13 A/W and an external quantum efficiency higher than 25%. From the photoresponse and noise measurements, the bandwidth is extracted to be ∼1 kHz and the normalized detectivity is calculated to be 1.2×109 cm Hz1/2 W−1. These results provide important insights for the future integration of graphene with silicon device technology.