Details

Autor(en) / Beteiligte

• Luo, Yongkang
• Li, H.
• Dai, Y. M.
• Miao, H.
• Shi, Y. G.
• Ding, H.
• Taylor, A. J.
• Yarotski, D. A.
• Prasankumar, R. P.
• Thompson, J. D.

Titel

Hall effect in the extremely large magnetoresistance semimetal WTe2

Ist Teil von

• Applied physics letters, 2015-11, Vol.107 (18)

Ort / Verlag

Melville: American Institute of Physics

Erscheinungsjahr

2015

Link zum Volltext

Quelle

American Institute of Physics (AIP) Journals

Beschreibungen/Notizen

• We systematically measured the Hall effect in the extremely large magnetoresistance semimetal WTe2. By carefully fitting the Hall resistivity to a two-band model, the temperature dependencies of the carrier density and mobility for both electron- and hole-type carriers were determined. We observed a sudden increase in the hole density below ∼160 K, which is likely associated with the temperature-induced Lifshitz transition reported by a previous photoemission study. In addition, a more pronounced reduction in electron density occurs below 50 K, giving rise to comparable electron and hole densities at low temperature. Our observations indicate a possible electronic structure change below 50 K, which might be the direct driving force of the electron-hole “compensation” and the extremely large magnetoresistance as well. Numerical simulations imply that this material is unlikely to be a perfectly compensated system.