Details

Autor(en) / Beteiligte

• Vanstreels, Kris
• Zahedmanesh, Houman
• Hangen, Ude

Titel

Thermal expansion coefficients of ultralow-k dielectric films by cube corner indentation tests at elevated temperatures

Ist Teil von

• Applied physics letters, 2015-12, Vol.107 (23)

Ort / Verlag

Melville: American Institute of Physics

Erscheinungsjahr

2015

Quelle

AIP Journals (American Institute of Physics)

Beschreibungen/Notizen

• This paper demonstrates the use of cube corner indentation tests performed at elevated temperatures to measure the coefficient of thermal expansion (CTE) of ultralow-k dielectric films. Using this approach, the CTE of organo-silicate glass low-k films with different intrinsic film stresses is estimated to vary between 8.2 ± 0.8 ppm/ °C and 10.9 ± 1.1 ppm/ °C. The advantages and limitations of the proposed test methodology are discussed.