Details

Autor(en) / Beteiligte

• Bi, Feng
• Huang, Mengchen
• Bark, Chung-Wung
• Ryu, Sangwoo
• Lee, Sanghan
• Eom, Chang-Beom
• Irvin, Patrick
• Levy, Jeremy

Titel

Electro-mechanical response of top-gated LaAlO3/SrTiO3

Ist Teil von

• Journal of applied physics, 2016-01, Vol.119 (2)

Ort / Verlag

Melville: American Institute of Physics

Erscheinungsjahr

2016

Quelle

AIP Journals Complete

Beschreibungen/Notizen

• LaAlO3/SrTiO3 heterostructures are known to exhibit a sharp, hysteretic metal-insulator transition (MIT) with large enhanced capacitance near depletion. To understand the physical origin of this behavior, the electromechanical response of top-gated LaAlO3/SrTiO3 heterostructures is probed using two simultaneous measurement techniques: piezoresponse force microscopy (PFM) and capacitance spectroscopy. The observed hysteretic PFM responses show strong correlation with the capacitance signals, suggesting an interfacial carrier-mediated structural distortion associated with the gate-tuned MIT. In addition, the frequency dependence of the capacitance enhancement in LaAlO3/SrTiO3 is found to be well-matched to local PFM measurements. Our experimental results provide a fuller understanding of the top-gate tuned MIT in oxide heterostructure, which could be helpful for the development of future oxide-based nanoelectronics.