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Electro-mechanical response of top-gated LaAlO3/SrTiO3
Ist Teil von
Journal of applied physics, 2016-01, Vol.119 (2)
Ort / Verlag
Melville: American Institute of Physics
Erscheinungsjahr
2016
Quelle
AIP Journals Complete
Beschreibungen/Notizen
LaAlO3/SrTiO3 heterostructures are known to exhibit a sharp, hysteretic metal-insulator transition (MIT) with large enhanced capacitance near depletion. To understand the physical origin of this behavior, the electromechanical response of top-gated LaAlO3/SrTiO3 heterostructures is probed using two simultaneous measurement techniques: piezoresponse force microscopy (PFM) and capacitance spectroscopy. The observed hysteretic PFM responses show strong correlation with the capacitance signals, suggesting an interfacial carrier-mediated structural distortion associated with the gate-tuned MIT. In addition, the frequency dependence of the capacitance enhancement in LaAlO3/SrTiO3 is found to be well-matched to local PFM measurements. Our experimental results provide a fuller understanding of the top-gate tuned MIT in oxide heterostructure, which could be helpful for the development of future oxide-based nanoelectronics.