Details

Autor(en) / Beteiligte

• Tangi, Malleswararao
• Mishra, Pawan
• Ng, Tien Khee
• Hedhili, Mohamed Nejib
• Janjua, Bilal
• Alias, Mohd Sharizal
• Anjum, Dalaver H.
• Tseng, Chien-Chih
• Shi, Yumeng
• Joyce, Hannah J.
• Li, Lain-Jong
• Ooi, Boon S.

Titel

Determination of band offsets at GaN/single-layer MoS2 heterojunction

Ist Teil von

• Applied physics letters, 2016-07, Vol.109 (3)

Ort / Verlag

Melville: American Institute of Physics

Erscheinungsjahr

2016

Quelle

American Institute of Physics (AIP) Journals

Beschreibungen/Notizen

• We report the band alignment parameters of the GaN/single-layer (SL) MoS2 heterostructure where the GaN thin layer is grown by molecular beam epitaxy on CVD deposited SL-MoS2/c-sapphire. We confirm that the MoS2 is an SL by measuring the separation and position of room temperature micro-Raman E1 2g and A1 g modes, absorbance, and micro-photoluminescence bandgap studies. This is in good agreement with HRTEM cross-sectional analysis. The determination of band offset parameters at the GaN/SL-MoS2 heterojunction is carried out by high-resolution X-ray photoelectron spectroscopy accompanying with electronic bandgap values of SL-MoS2 and GaN. The valence band and conduction band offset values are, respectively, measured to be 1.86 ± 0.08 and 0.56 ± 0.1 eV with type II band alignment. The determination of these unprecedented band offset parameters opens up a way to integrate 3D group III nitride materials with 2D transition metal dichalcogenide layers for designing and modeling of their heterojunction based electronic and photonic devices.