Details

Autor(en) / Beteiligte

• Park, Min Hyuk
• Lee, Young Hwan
• Mikolajick, Thomas
• Schroeder, Uwe
• Hwang, Cheol Seong

Titel

Review and perspective on ferroelectric HfO2-based thin films for memory applications

Ist Teil von

• MRS communications, 2018-09, Vol.8 (3), p.795-808

Ort / Verlag

New York, USA: Cambridge University Press

Erscheinungsjahr

2018

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The ferroelectricity in fluorite-structure oxides such as hafnia and zirconia has attracted increasing interest since 2011. They have various advantages such as Si-based complementary metal oxide semiconductor-compatibility, matured deposition techniques, a low dielectric constant and the resulting decreased depolarization field, and stronger resistance to hydrogen annealing. However, the wake-up effect, imprint, and insufficient endurance are remaining reliability issues. Therefore, this paper reviews two major aspects: the advantages of fluorite-structure ferroelectrics for memory applications are reviewed from a material's point of view, and the critical issues of wake-up effect and insufficient endurance are examined, and potential solutions are subsequently discussed.