Details

Autor(en) / Beteiligte

• Chen, Jiehuan
• Lian, Xiaomei
• Zhang, Yingzhu
• Yang, Weitao
• Li, Jun
• Qin, Minchao
• Lu, Xinhui
• Wu, Gang
• Chen, Hongzheng

Titel

Interfacial engineering enables high efficiency with a high open-circuit voltage above 1.23 V in 2D perovskite solar cells

Ist Teil von

• Journal of materials chemistry. A, Materials for energy and sustainability, 2018, Vol.6 (37), p.18010-18017

Ort / Verlag

Cambridge: Royal Society of Chemistry

Erscheinungsjahr

2018

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The hole transport layer (HTL) and electron transport layer (ETL) play critical roles in perovskite solar cells (PVSCs). However, few studies have been done to optimize these two charge transport layers for two-dimensional (2D) PVSCs. Here in this work, both the HTL and ETL of PVSCs based on 2D perovskite (CH 3 (CH 2 ) 2 NH 3 ) 2 (CH 3 NH 3 ) 2 Pb 3 I 10 (BA 2 MA 2 Pb 3 I 10 ) are optimized to achieve high open-circuit voltage ( V oc ) and power conversion efficiency (PCE). The solution-processed NiO x was employed as the HTL to fabricate efficient 2D PVSCs with the structure of indium tin oxide (ITO)/HTL/BA 2 MA 2 Pb 3 I 10 /ETL/bathocuproine (BCP)/Ag. The PCE of the device with [6,6]-phenyl-C 61 -butyric acid methyl ester (PCBM) as the ETL is increased from 7.99% to 11.01% when NiO x was applied as the HTL instead of the commonly used poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS). The improved performance was attributed to the better matched energy levels and the reduced trap state for NiO x based devices. Considering the deeper HOMO (the highest occupied molecular orbital) level of ICBA (indene-C 60 bisadduct), ICBA was mixed with PCBM as the ETL to reduce the interfacial charge recombination between the perovskite and ETL. This strategy further boosted the PCE to 12.07% with the highest V oc of 1.23 V for 2D PVSCs so far. This work suggests the potential of interfacial engineering for the performance improvement of 2D PVSCs.