Sie befinden Sich nicht im Netzwerk der Universität Paderborn. Der Zugriff auf elektronische Ressourcen ist gegebenenfalls nur via VPN oder Shibboleth (DFN-AAI) möglich. mehr Informationen...
In-situ characterization of electron-assisted regeneration of Cz-Si solar cells
Ist Teil von
Solar energy materials and solar cells, 2018-10, Vol.185, p.283-286
Ort / Verlag
Amsterdam: Elsevier B.V
Erscheinungsjahr
2018
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
We examine the regeneration kinetics of passivated emitter and rear solar cells (PERCs) fabricated on boron-doped p-type Czochralski-grown silicon wafers in darkness by electron injection via application of a forward bias voltage at elevated temperature (140 °C) in order to discriminate between electronic and photonic effects. Based on these dark regeneration experiments, we address the existing inconsistency regarding the measured linear dependence of the regeneration rate constant on the excess carrier density. Using the method of dark regeneration by current injection into the solar cell, we are able to measure the total recombination current of the solar cell at the actual regeneration temperature under applied voltage, i.e., at the physically relevant regeneration conditions. The direct comparison of the regeneration rate constant as a function of electronically injected carrier concentration in the dark and the regeneration rate constant during illumination clearly shows that the regeneration is a purely electronically stimulated effect and that photons are not directly involved.
•We have regenerated p-type PERC cells by electron injection via application of a forward bias voltage Vbias in darkness.•Illuminated I-V characteristics show a successful permanent regeneration by electron injection in darkness.•By fitting the in-situ measured total recombination current, we extracted regeneration rate constants Rde at the different Vbias.•A linear correlation of Rde and Δn, which was determined using PC1D simulations, is observed.•A comparison with illumination-induced regeneration data reveals that the regeneration is purely electronically stimulated.