Details

Autor(en) / Beteiligte

• Cheng, Liwen
• Cao, Changrui
• Ma, Jian
• Xu, Zuozheng
• Lan, Tian
• Yang, Jinpeng
• Chen, Haitao
• Yu, Hongyan
• Wu, Shudong
• Yao, Shun
• Zeng, Xianghua

Titel

Suppressed polarization effect and enhanced carrier confinement in InGaN light-emitting diodes with GaN/InGaN/GaN triangular barriers

Ist Teil von

• Journal of applied physics, 2018-06, Vol.123 (22)

Ort / Verlag

Melville: American Institute of Physics

Erscheinungsjahr

2018

Link zum Volltext

Quelle

美国小型学会期刊集（AIP Scitation平台）

Beschreibungen/Notizen

• In this study, with the objective of lowering the polarization without degrading the carrier confinement in the active region, an InGaN light-emitting diode with GaN/InGaN/GaN triangular (GIGT) quantum barriers (QBs) was proposed and studied systematically. When traditional GaN QBs were replaced by the GIGT QBs, the output power at 150 mA rose from 82.05 to 155.99 mW, and the efficiency droop was decreased from 51.0% to 16.5%. Simulation results indicated that these improvements could result from the effectively suppressed polarization field in the quantum wells and the markedly enhanced carrier confinement in the active region because of the appropriately modified energy band structure.