Journal of electronic materials, 2018-08, Vol.47 (8), p.4508-4514
2018
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Details
- Autor(en) / Beteiligte
- Titel
- Electronic and Optical Properties of Atomic Layer-Deposited ZnO and TiO2
- Ist Teil von
- Journal of electronic materials, 2018-08, Vol.47 (8), p.4508-4514
- Ort / Verlag
- New York: Springer US
- Erscheinungsjahr
- 2018
- Quelle
- Alma/SFX Local Collection
- Beschreibungen/Notizen
- Metal oxides are attractive for thin film optoelectronic applications. Due to their wide energy bandgaps, ZnO and TiO 2 are being investigated by many researchers. Here, we have studied the electrical and optical properties of ZnO and TiO 2 as a function of deposition and post-annealing conditions. Atomic layer deposition (ALD) is a novel thin film deposition technique where the growth conditions can be controlled down to atomic precision. ALD-grown ZnO films are shown to exhibit tunable optical absorption properties in the visible and infrared region. Furthermore, the growth temperature and post-annealing conditions of ZnO and TiO 2 affect the electrical properties which are investigated using ALD-grown metal oxide as the electron transport channel on thin film field-effect devices.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0361-5235eISSN: 1543-186XDOI: 10.1007/s11664-018-6373-8Titel-ID: cdi_proquest_journals_2042477810
- Format
- –
- Schlagworte
- 5th European Conference on Renewable Energy Systems, Annealing, Atomic layer epitaxy, Characterization and Evaluation of Materials, Chemistry and Materials Science, Electrical properties, Electron transport, Electronics and Microelectronics, Energy gap, Instrumentation, Materials Science, Metal oxides, Optical and Electronic Materials, Optical properties, Optoelectronics, Photonic band gaps, Photovoltaic cells, Solid State Physics, Thin films, Titanium dioxide, Topical Collection: Electronic Materials for Renewable Energy Applications, Zinc oxide