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Electronic and Optical Properties of Atomic Layer-Deposited ZnO and TiO2
Ist Teil von
Journal of electronic materials, 2018-08, Vol.47 (8), p.4508-4514
Ort / Verlag
New York: Springer US
Erscheinungsjahr
2018
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
Metal oxides are attractive for thin film optoelectronic applications. Due to their wide energy bandgaps, ZnO and TiO
2
are being investigated by many researchers. Here, we have studied the electrical and optical properties of ZnO and TiO
2
as a function of deposition and post-annealing conditions. Atomic layer deposition (ALD) is a novel thin film deposition technique where the growth conditions can be controlled down to atomic precision. ALD-grown ZnO films are shown to exhibit tunable optical absorption properties in the visible and infrared region. Furthermore, the growth temperature and post-annealing conditions of ZnO and TiO
2
affect the electrical properties which are investigated using ALD-grown metal oxide as the electron transport channel on thin film field-effect devices.