Details

Autor(en) / Beteiligte

• Lei, Yanlian
• Deng, Ping
• Zhang, Qiaoming
• Xiong, Zuhong
• Li, Qinghua
• Mai, Jiangquan
• Lu, Xinhui
• Zhu, Xunjin
• Ong, Beng S.

Titel

Hydrocarbons‐Driven Crystallization of Polymer Semiconductors for Low‐Temperature Fabrication of High‐Performance Organic Field‐Effect Transistors

Ist Teil von

• Advanced functional materials, 2018-04, Vol.28 (15), p.n/a

Ort / Verlag

Hoboken: Wiley Subscription Services, Inc

Erscheinungsjahr

2018

Quelle

Wiley Online Library - AutoHoldings Journals

Beschreibungen/Notizen

• While many high‐performance polymer semiconductors are reported for organic field‐effect transistors (OFETs), most require a high‐temperature postdeposition annealing of channel semiconductors to achieve high performance. This negates the fundamental attribute of OFETs being a low‐cost alternative to conventional high‐cost silicon technologies. A facile solution process is developed through which high‐performance OFETs can be fabricated without thermal annealing. The process involves incorporation of an incompatible hydrocarbon binder or wax into the channel semiconductor composition to drive rapid phase separation and instantaneous crystallization of polymer semiconductor at room temperature. The resulting composite channel semiconductor film manifests a nano/microporous surface morphology with a continuous semiconductor nanowire network. OFET mobility of up to about 5 cm2 V−1 s−1 and on/off ratio ≥ 106 are attained. These are hitherto benchmark performance characteristics for room‐temperature, solution‐processed polymer OFETs, which are functionally useful for many impactful applications. Incorporation of a hydrocarbon binder into a polar donor‐acceptor semiconductor enables room‐temperature fabrication of a highly ordered channel semiconductor for organic field‐effect transistors (OFETs) under ambient conditions. The resulting OFETs have afforded excellent field‐effect mobility to about 5 cm2 V−1 s−1 – a benchmark performance for polymer OFETs without postdeposition thermal annealing.