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Influence of inverse spinel structured CuGa2O4 on microwave dielectric properties of normal spinel ZnGa2O4 ceramics
Ist Teil von
Journal of the American Ceramic Society, 2018-04, Vol.101 (4), p.1646-1654
Ort / Verlag
Columbus: Wiley Subscription Services, Inc
Erscheinungsjahr
2018
Quelle
Wiley Online Library
Beschreibungen/Notizen
Spinel Zn1‐xCuxGa2O4 (x = 0‐0.15) ceramics were prepared by the conventional solid‐state method. Only a single phase was indexed in all samples. The continuous lattice contraction of ZnGa2O4 unit cell was caused by Cu2+ substitution, and the lattice parameter shows a linear correlation with the content of Cu. The refined crystal structure parameters suggest that Cu2+ preferentially occupies the octahedron site, and the degree of inversion of Zn1‐xCuxGa2O4 (x = 0‐0.15) ceramics almost equals to the content of Cu2+. The relative intensity of A*1g mode in Raman spectra confirm that the degree of inversion climbed with the growing content of Cu2+. The experimental and theoretical dielectric constant of Zn1‐xCuxGa2O4 ceramics fit well. Zn1‐xCuxGa2O4 (x = 0.01) ceramics sintered at 1400°C for 2 h exhibited good microwave dielectric properties, with εr = 9.88, Q × f = 131,445 GHz, tanδ = 6.85 × 10−5, and τf = −60 ppm/°C.