Sie befinden Sich nicht im Netzwerk der Universität Paderborn. Der Zugriff auf elektronische Ressourcen ist gegebenenfalls nur via VPN oder Shibboleth (DFN-AAI) möglich. mehr Informationen...
A junctionless double gate radiation sensitive FET (RADFET) has been proposed to improve the radiation sensitivity and its application as CMOS-based dosimeter is discussed. Analytical model has been developed from 2D Poisson equation using variable separation technique and electrical performance of the proposed architecture has been compared with the conventional double gate (DG) RADFET. The comparison of device characteristics shows that the JL DG RADFET exhibits better electrical performance and sensitivity as compare to conventional DG RADFET. The model is verified using ATLAS 3D device simulation software.