Details

Autor(en) / Beteiligte

• Ievtushenko, A.
• Khyzhun, O.
• Shtepliuk, I.
• Bykov, O.
• Jakieła, R.
• Tkach, S.
• Kuzmenko, E.
• Baturin, V.
• Karpenko, О.
• Olifan, O.
• Lashkarev, G.

Titel

X-ray photoelectron spectroscopy study of highly-doped ZnO:Al,N films grown at O-rich conditions

Ist Teil von

• Journal of alloys and compounds, 2017-10, Vol.722, p.683-689

Ort / Verlag

Lausanne: Elsevier B.V

Erscheinungsjahr

2017

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Highly-doped ZnO:Al,N films were grown under oxygen-rich conditions on Si substrates by magnetron sputtering using a layer-by-layer growth technique. An investigation of the highly-doped ZnO:Al,N films is attractive for obtaining p-type conductivity in ZnO films as well as for an improvement of performance of ZnO-based ultraviolet (UV) detectors. X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis (EDX), X-ray photoelectron spectroscopy (XPS), X-ray emission spectroscopy (XES) and Secondary ion mass spectrometry (SIMS) were used for the samples characterization. An effect of high Al and N doping on structure and electronic properties of ZnO films was studied and discussed. [Display omitted] •Highly-doped ZnO:Al,N films were grown under oxygen-rich conditions.•Zn3N2 phase formation at a nitrogen concentration of 4.3 at. % in ZnO was studied.•The reasons of n-type conductivity in highly-doped ZnO:Al,N films were proposed.