Details

Autor(en) / Beteiligte

• Fauzia, Vivi
• Yusnidar, M.N.
• Lalasari, Latifa Hanum
• Subhan, Achmad
• Umar, Akrajas Ali

Titel

High figure of merit transparent conducting Sb-doped SnO2 thin films prepared via ultrasonic spray pyrolysis

Ist Teil von

• Journal of alloys and compounds, 2017-10, Vol.720, p.79-85

Ort / Verlag

Lausanne: Elsevier B.V

Erscheinungsjahr

2017

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Doped tin oxide has been studied extensively because of its potential as a replacement for indium tin oxide in transparent conducting oxide layers. Antimony-doped tin oxide (ATO) is one of the most promising materials in this regard, due to its superior transparency in the visible region and broad scope for electrical property improvements. In this paper, we report the fabrication of highly conductive transparent ATO thin films using a simple, low-cost ultrasonic spray pyrolysis method. A film with a resistivity of 5.8×10−5 Ω cm, transmittance of 88% at 550 nm, and figure of merit as high as 47.22×10−2 (Ω/cm2)−1 was produced by tuning the deposition time. The ATO films produced in this experiment may be used as transparent conducting films with performance comparable to that of indium tin oxide. •Conductive ATO films were synthesized via ultrasonic spray pyrolysis.•The best film exhibited a resistivity of 5.8×10−5 Ω cm.•The best film exhibited a transmittance of 90% at 550 nm.•The film characteristics were tuned via deposition time.•These films may replace ITO in optoelectronic devices.