Details

Autor(en) / Beteiligte

• Hospodková, A.
• Hulicius, E.
• Pangrác, J.
• Dominec, F.
• Mikhailova, M.P.
• Veinger, A.I.
• Kochman, I.V.

Titel

InAs/GaSb/AlSb composite quantum well structure preparation with help of reflectance anisotropy spectroscopy

Ist Teil von

• Journal of crystal growth, 2017-04, Vol.464, p.206-210

Ort / Verlag

Amsterdam: Elsevier B.V

Erscheinungsjahr

2017

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Magnetotransport, optical, spin-dependent and topological properties of the composite InAs/GaSb/AlSb quantum wells based on the broken-gap heterojunctions have been actively studied during the last two decades as promising materials for spintronic and nanoelectronic applications. Mostly the structures were prepared by MBE, since preparing heterostructures of this materials system by MOVPE presents several challenges. We have successfully prepared by MOVPE structures with broken gap InAs/GaSb composite quantum wells surrounded by AlSb barriers on InAs and GaSb substrates. The whole process of structure preparation was optimized with help of in situ LayTec Epiras measurements. Suitable interfaces, switching sequences, growth rates and suitable precursors for the growth of the structure are discussed. The quality of the structure was checked by electron paramagnetic resonance for differently oriented magnetic field up to 14kOe at temperatures from 2.7K to 20K. Intense Shubnikov de Haas oscillations appeared at low temperatures and helped us characterize the properties of the structure. •Structures with broken gap InAs/GaSb QWs were prepared by MOVPE.•Preparation of AlSb, GaSb, InAs layers and their interfaces was optimized.•EPR measurements at low temperatures were realized.•Intensive Shubnikov de Haas oscillations appeared at low temperatures.•Presence of SdH oscillations indicates high quality of grown structures.