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A resonant‐cavity blue–violet light‐emitting diode with conductive nanoporous distributed Bragg reflector
Ist Teil von
Physica status solidi. A, Applications and materials science, 2017-08, Vol.214 (8), p.1600866-n/a
Ort / Verlag
Weinheim: Wiley Subscription Services, Inc
Erscheinungsjahr
2017
Quelle
Wiley Online Library All Journals
Beschreibungen/Notizen
While III‐Nitride micro‐cavity light emitters are of great interest, electrically conductive and optically highly reflective distributed Bragg mirrors remain a major challenge. In this paper, we demonstrate a blue–violet resonant‐cavity light‐emitting diode (RC‐LED) with a novel conductive nanoporous (NP)‐GaN/GaN DBR as the bottom mirror. The NP‐DBR is converted from an all‐GaN epitaxial structure with modulated doping profile, and formed by using a conductivity‐selective anodic electro‐chemical etching process. The NP‐GaN material has a tunable index of refraction and maintains its electrical conductivity. The benefits of such NP‐DBR RC‐LED include a more efficient quasi‐vertical current injection scheme benefited from the conductive NP‐DBR, and a manufacturable fabrication process, which makes NP‐DBR a unique opportunity for the commercialization of GaN‐based vertical‐cavity surface emitters.