Details

Autor(en) / Beteiligte

• Liu, Xinke
• Wu, Jing
• Yu, Wenjie
• Chen, Le
• Huang, Zhonghui
• Jiang, He
• He, Jiazhu
• Liu, Qiang
• Lu, Youming
• Zhu, Deliang
• Liu, Wenjun
• Cao, Peijiang
• Han, Shun
• Xiong, Xinbo
• Xu, Wangying
• Ao, Jin‐Ping
• Ang, Kah‐Wee
• He, Zhubing

Titel

Monolayer WxMo1−xS2 Grown by Atmospheric Pressure Chemical Vapor Deposition: Bandgap Engineering and Field Effect Transistors

Ist Teil von

• Advanced functional materials, 2017-04, Vol.27 (13), p.n/a

Ort / Verlag

Hoboken: Wiley Subscription Services, Inc

Erscheinungsjahr

2017

Quelle

Access via Wiley Online Library

Beschreibungen/Notizen

• Monolayer WxMo1−xS2‐based field effect transistors are demonstrated for the first time on the monolayer WxMo1−xS2 flake, which is grown by the chemical vapor deposition method under an atmospheric pressure. Detailed material studies using Raman and photoluminescence measurements have been carried out on the as‐grown monolayer WxMo1−xS2. Electronic band structure of monolayer WxMo1−xS2 has been calculated using first‐principle theory. The thermal stability of monolayer WxMo1−xS2 has been evaluated using Raman‐temperature measurement. Carrier transport study on the fabricated WxMo1−xS2 FETs has been analyzed using temperature‐dependent current measurement, and a field effect mobility of ≈30 cm2 V−1 s−1 at 300 K is obtained. Monolayer WxMo1−xS2‐based field effect transistors are demonstrated for the first time on the monolayer WxMo1−xS2 flake, which is grown by the chemical vapor deposition method under atmospheric pressure. Carrier transport study on the fabricated WxMo1−xS2 FETs is analyzed using temperature‐dependent current measurement, and a field effect mobility of ≈30 cm2 V−1 s−1 at 300 K is obtained.