Details

Autor(en) / Beteiligte

• De Nicola, Francesco
• Salvato, Matteo
• Cirillo, Carla
• Crivellari, Michele
• Boscardin, Maurizio
• Passacantando, Maurizio
• Nardone, Michele
• De Matteis, Fabio
• Motta, Nunzio
• De Crescenzi, Maurizio
• Castrucci, Paola

Titel

100% internal quantum efficiency in polychiral single-walled carbon nanotube bulk heterojunction/silicon solar cells

Ist Teil von

• Carbon (New York), 2017-04, Vol.114, p.402-410

Ort / Verlag

New York: Elsevier Ltd

Erscheinungsjahr

2017

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Bulk heterojunction films made of polychiral single-walled carbon nanotubes (SWCNTs) form efficient heterojunction solar cells with n-type crystalline silicon (n-Si), due to their superior electronic, optical, and electrical properties. The films are multi-functional, since their hierarchical surface morphology provides a biomimetical anti-reflective, air-stable, and hydrophobic encapsulation for Si. Also, the films have a large effective area conferring them high optical absorption, which actively contribute to the solar energy harvesting together with Si. Here, we report photovoltaic devices with photoconversion efficiency up to 12% and a record 100% internal quantum efficiency (IQE). Such unprecedented IQE value is truly remarkable and indicates that every absorbed photon from the device, at some wavelengths, generates a pair of separated charge carriers, which are collected at the electrodes. The SWCNT/Si devices favor high and broadband carrier photogeneration; charge dissociation of ultra-fast hot excitons; transport of electrons through n-Si and high-mobility holes through the SWCNT percolative network. Moreover, by varying the film thickness, it is possible to tailor the physical properties of such a two-dimensional interacting system, therefore the overall device features. These results not only pave the way for low-cost, high-efficient, and broadband photovoltaics, but also are promising for the development of generic SWCNT-based optoelectronic applications. [Display omitted]