Details

Autor(en) / Beteiligte

• Seshadri, M.
• Anjos, V.
• Bell, M. J. V.
• Barbosa, Luiz C.
• Bosco, Giácomo B. F.
• Tessler, Leandro R.
• Suresh Kumar, J.
• Graça, Manuel P. F.
• Soares, Manuel. J.
• Radha, M.
• Ratnakaram, Y. C.

Titel

Doped tellurite glasses: Extending near‐infrared emission for near‐2.0‐μm amplifiers

Ist Teil von

• International journal of applied glass science, 2017-06, Vol.8 (2), p.216-225

Ort / Verlag

Westerville: Wiley Subscription Services, Inc

Erscheinungsjahr

2017

Quelle

Wiley Online Library Journals Frontfile Complete

Beschreibungen/Notizen

• Tm3+‐singly‐doped and Tm3+‐/Ho3+‐codoped TeO2‐Bi2O3‐ZnO‐Li2O‐Nb2O5 (TBZLN) tellurite glasses were successfully prepared by the melt‐quenching technique. Emission characteristics and energy transfer mechanisms were studied upon 785‐nm laser diode excitation. A significant enhancement of emission intensity at 1.81 μm with increasing concentration of Tm3+ ions has been observed while increase in the emission intensity at 2.0 μm with increasing concentration of Ho3+ has been observed up to the equal concentration of Tm3+ (0.5 mol%) in TBZLN glasses. The stimulated emission cross section of Tm3+: 3F4→3H6 (5.20×10−21 cm2) and Ho3+: 5I7→5I8 (4.00×10−21 cm2) in 1.0 mol% Tm3+‐doped and 0.5 mol% Tm3+/1.0 mol% Ho3+‐codoped TBZLN glasses are higher compared with the reported and are found to be excellent candidates for solid‐state lasers operating at ~1.8 and 2.0 μm, respectively. The extension of near‐infrared (NIR) emission of Tm3+ with Ho3+ ions provides the possibility of using these materials for broadband NIR amplifiers.