Sie befinden Sich nicht im Netzwerk der Universität Paderborn. Der Zugriff auf elektronische Ressourcen ist gegebenenfalls nur via VPN oder Shibboleth (DFN-AAI) möglich. mehr Informationen...
Process effects on leakage current of Si‐PIN neutron detectors with porous microstructure
Ist Teil von
Physica status solidi. A, Applications and materials science, 2017-06, Vol.214 (6), p.n/a
Ort / Verlag
Weinheim: Wiley Subscription Services, Inc
Erscheinungsjahr
2017
Quelle
Wiley Online Library - AutoHoldings Journals
Beschreibungen/Notizen
Using the technique of Microfabrication, such as deep silicon dry etching, lithography, etc. Si‐PIN neutron detectors with porous microstructure have been successfully fabricated. In order to lower the leakage current, the key fabrication processes, including the Al windows opening, deep silicon etching and the porous side wall smoothing, have been optimized. The cross‐section morphology and current–voltage characteristics have been measured to evaluate the microfabrication processes. With the optimized conditions presented by the measurements, a neutron detector with a leakage current density of 2.67 μA cm−2 at a bias of −20 V is obtained. A preliminary neutron irradiation test with 252Cf neutron source has also been carried out. The neutron irradiation test shows that the neutron detection efficiency of the microstructured neutron detectors is almost 3.6 times higher than that of the planar ones.