Details

Autor(en) / Beteiligte

• Nakata, Mitsuru
• Ochi, Mototaka
• Tsuji, Hiroshi
• Takei, Tatsuya
• Miyakawa, Masashi
• Fujisaki, Yoshihide
• Goto, Hiroshi
• Kugimiya, Toshihiro
• Yamamoto, Toshihiro

Titel

P‐1: Fabrication of a Short‐Channel Oxide TFT Utilizing the Resistance‐Reduction Phenomenon in In‐Ga‐Sn‐O

Ist Teil von

• SID International Symposium Digest of technical papers, 2017-05, Vol.48 (1), p.1227-1230

Ort / Verlag

Campbell: Wiley Subscription Services, Inc

Erscheinungsjahr

2017

Quelle

Wiley Online Library Journals

Beschreibungen/Notizen

• The resistance of an In‐Ga‐Sn‐O (IGTO) film with a SiNx /SiOx passivation layer was found to decrease significantly by thermal annealing, due to hydrogen diffusion from the SiNx layer into the IGTO film through the SiOx layer. We propose a method that utilizes this “resistance‐reduction phenomenon” to reduce the effective channel length in IGTO thin‐film transistors with a SiNx /SiOx passivation layer by the partial formation of a low‐resistance region in the IGTO film. The method is experimentally validated, and we show that even shorter channel lengths can be achieved by employing a SiNx /SiOx layer as an etch‐stop layer.