Details

Autor(en) / Beteiligte

• Voinigescu, Sorin P.
• Shopov, Stefan
• Bateman, James
• Farooq, Hassan
• Hoffman, James
• Vasilakopoulos, Konstantinos

Titel

Silicon Millimeter-Wave, Terahertz, and High-Speed Fiber-Optic Device and Benchmark Circuit Scaling Through the 2030 ITRS Horizon

Ist Teil von

• Proceedings of the IEEE, 2017-06, Vol.105 (6), p.1087-1104

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2017

Quelle

IEEE Xplore

Beschreibungen/Notizen

• This paper reviews the technology requirements of future 100-300-GHz millimeter-wave (mm-wave) systems-on-chip (SOI) for high data rate wireless and sensor applications, as well as for 100-300-GBaud fiber-optic communication systems. Measurements of state-of-the-art silicon metal-oxide-semiconductor field-effect transistors (MOSFETs), SiGe heterojunction bipolar transistors (HBTs), and of a variety of HBT-HBT and MOS-HBT cascodes are presented from dc to 325 GHz. The challenges facing mm-wave MOSFET and SiGe HBT device and benchmark circuit scaling toward 2-3-nm gate length and beyond 2-THz transistor F max are discussed for the first time based on technology computer-aided design (TCAD) and atomistic simulations. Finally, simulations of the scaling of the SiGe HBT analog and mixed-signal mm-wave benchmark circuit performance across future technology nodes predict that PAs with 45% power added efficiency (PAE) at 220 GHz, track and hold amplifiers (THAs) with over 140-GHz bandwidth, and transimpedance amplifiers (TIAs) with 250-GHz bandwidth and less than 5-dB noise figure will become feasible by 2030. Comparison of simulations and measurements for representative benchmark circuits such as TIAs, THAs, linear modulator drivers, digital-to-analog converters (DACs), and power amplifiers (PAs), fabricated in advanced SiGe BiCMOS and nanoscale SOI complementary metal-oxide-semiconductor (CMOS) technologies, and operating at 120 Gb/s and above 100 GHz, respectively, are presented to support the credibility of the benchmark circuit scaling exercise.