Details

Autor(en) / Beteiligte

• Egorov, V. K.
• Egorov, E. V.
• Kukushkin, S. A.
• Osipov, A. V.

Titel

Structural heteroepitaxy during topochemical transformation of silicon to silicon carbide

Ist Teil von

• Physics of the solid state, 2017-04, Vol.59 (4), p.773-779

Ort / Verlag

Moscow: Pleiades Publishing

Erscheinungsjahr

2017

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Silicon carbide samples synthesized from silicon by topochemical substitution of atoms are studied by the ion channeling method. The results of the analysis unambiguously demonstrate the occurrence of structural heteroepitaxy. The lattice of synthesized silicon carbide of hexagonal polytype 6 H is epitaxially matched in the 〈0001〉 direction with the lattice grating grid array network of an initial substrate silicon in the 〈111〉 direction. The main features of structural self-coupling matching in this epitaxial heterocomposite are revealed. Despite the very large silicon carbide and silicon lattice parameter mismatch, the misfit dislocation density at the interface is low, which is a feature of the topochemical substitution method leading to comparable structures.