Details

Autor(en) / Beteiligte

• Liu, Bin
• Bao, Yan
• Ling, Hai-feng
• Zhu, Wen-sai
• Gong, Rui-jun
• Lin, Jin-yi
• Xie, Ling-hai
• Yi, Ming-dong
• Huang, Wei

Titel

Fluorinated p-n Type Copolyfluorene as Polymer Electret for Stable Nonvolatile Organic Transistor Memory Device

Ist Teil von

• Chinese journal of polymer science, 2016-10, Vol.34 (10), p.1183-1195

Ort / Verlag

Beijing: Chinese Chemical Society and Institute of Chemistry, CAS

Erscheinungsjahr

2016

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Abstract In this study, a kind of fluorinated copolyfluorene, named poly[（4-（octyloxy）-9,9-diphenylfluorene-2,7-diyl）-alt- （2,3,5,6-tetrafluoro-1,4-phenylene）] （PODPF-TFP）, is synthesized by facile palladium-based direct aromatization. Compared to the non-fluorinated counterpart, poly[（4-（octyloxy）-9,9-diphenylfluorene-2,7-diyl）-alt-（p-phenylene）] （PODPF-P）, deeper HOMO/LUMO energy level combined with steric hindrance effect endow PODPF-TFP with excellent spectra and morphology stability. Finally, organic field-effect transistor （OFET） memory devices are fabricated with PODPF-P/PODPF- TFP as the dielectric layers, and they both exhibit flash type storage characteristic. Owing to the electronegativity of fluorine atom, the device based on PODPF-TFP exhibits larger memory window and more stable Ion/Ioff ratio during a retention time of 10^4 s as well as a better aging stability. The present study suggests that fluorinated p-n copolyfluorene electrets could enhance the capabilities of charge trapping and storage, which are promising for OFET memory devices.