Details

Autor(en) / Beteiligte

• Octon, Tobias J.
• Nagareddy, V. Karthik
• Russo, Saverio
• Craciun, Monica F.
• Wright, C. David

Titel

Fast High-Responsivity Few-Layer MoTe2 Photodetectors

Ist Teil von

• Advanced optical materials, 2016-11, Vol.4 (11), p.1750-1754

Ort / Verlag

Weinheim: Blackwell Publishing Ltd

Erscheinungsjahr

2016

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The transition metal dichalcogenide MoTe2 is fabricated into few‐layer field‐effect transistors that show hole conduction with a mobility of 2.04 V cm−2 s−1. Four‐layer MoTe2 devices have a high photoresponsivity of 6 A W−1 and a response time, at around 160 μs, over 100 times faster than previously reported, making them a strong candidate for high speed and high sensitivity photodetection.