Details

Autor(en) / Beteiligte

• Reed, Austin S.
• Paine, David C.
• Lee, Sunghwan

Titel

Effect of O2 Fraction in the Sputter Gas on the Electrical Properties of Amorphous In-Zn-O and the Thin Film Transistor Performance

Ist Teil von

• Journal of electronic materials, 2016-12, Vol.45 (12), p.6310-6316

Ort / Verlag

New York: Springer US

Erscheinungsjahr

2016

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Amorphous oxide semiconductors (AOSs) exhibiting high mobility in the range of 10–30 cm 2 /Vs have received significant attention for their application in flexible and transparent electronics such as next-generation displays. Here, we report on how the oxygen volume fraction (vol.%) in the O 2 /Ar sputter gas affects both the electrical properties of sputtered amorphous In-Zn-O (a-IZO) and the threshold voltage of a-IZO thin film transistor (TFT) devices. As the oxygen fraction increases during sputter deposition, the carrier density in a-IZO is adjusted from the heavily-doped regime of >10 20 /cm 3 to the semiconducting regime of <10 17 /cm 3 . A series of bottom-gated TFT devices were fabricated through depositing the channel a-IZO films as a function of O 2 vol.%. All the TFTs manufactured operate in depletion mode and the threshold voltage is found to shift positively with the increasing presence of O 2 in the sputter gas. These results are attributed to both a decrease in oxygen vacancy defects, which donate two free carriers per vacancy, and a subsequent reduction in the a-IZO channel’s carrier density.