Details

Autor(en) / Beteiligte

• Takakura, Kenichiro
• Hori, Masato
• Yoneoka, Masashi
• Tsunoda, Isao
• Nakashima, Toshiyuki
• Simoen, Eddy
• Claeys, Cor

Titel

Thermal recovery process of electron irradiated Si1-xCx source/drain n-MOSFETs

Ist Teil von

• Physica status solidi. C, 2015-12, Vol.12 (12), p.1405-1408

Ort / Verlag

Berlin: WILEY-VCH Verlag

Erscheinungsjahr

2015

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• In this study, the performance degradation by electron irradiation and the thermal recovery process of Si0.99C0.01 source/drain (S/D) n‐MOSFETs are reported. The electron mobility is 15% enhanced by 1%‐C doping in the S/D stressor region. The electron mobility is degraded by 2‐MeV electron irradiation, but the relative change was the same irrespective of C doping and electron fluence. This fact indicates that tensile‐strain relaxation by displacement damage in the Si:C stressors is not significantly impacting the mobility degradation by electron irradiation. Evidence is given that increased scattering in the channel is the main cause of mobility degradation by 2‐MeV electron irradiation. In addition, it is shown that for a fluence of 5x1017 e/cm2, the electrical performance is recovered by thermal annealing. After 323 K for 15 min annealing, the mobility amounts to 95% of the pre‐irradiation value. In the case of Si0.7Ge0.3 S/D p‐MOSFETs, it has been shown before that the device performance is recovered to the same degree for the same irradiation/thermal annealing conditions of this study. CMOS circuits are fabricated by a combination of n‐MOSFETs and p‐MOSFETs, therefore, it can be confirmed that strained CMOS devices using Si:C S/D n‐MOSFETs and SiGe S/D p‐MOSFETs, respectively, can operate in the radiation environment studied here. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)