Details

Autor(en) / Beteiligte

• Nandi, S K
• Choi, W-K
• Noh, YS
• Oh, M S
• Maikap, S
• Hwang, N M
• Kim, D-Y
• Chatterjee, S
• Samanta, S K
• Maiti, C K

Titel

Investigations on Ta^sub 2^O^sub 5^/ZnO insulator-semiconductor interfaces

Ist Teil von

• Electronics letters, 2002-10, Vol.38 (22), p.1

Ort / Verlag

Stevenage: John Wiley & Sons, Inc

Erscheinungsjahr

2002

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The electrical and interfacial properties of Ta^sub 2^O^sub 5^/ZnO/p-Si metal-insulator-semiconductor structures are investigated using high frequency capacitance-voltage and conductance-voltage characteristics. Charge trapping behaviour under Fowler-Nordheim constant current stressing is also reported. An interface state density (1.22 × 10^sup 12^ cm^sup -2^ eV^sup -1^) has been observed for the Ta^sup 2^O^sup 5^/ZnO interface.