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Autor(en) / Beteiligte
Titel
Atomic-Layer-Deposited Aluminum and Zirconium Oxides for Surface Passivation of TiO2 in High-Efficiency Organic Photovoltaics
Ist Teil von
  • Advanced energy materials, 2014-10, Vol.4 (15), p.n/a
Ort / Verlag
Weinheim: Blackwell Publishing Ltd
Erscheinungsjahr
2014
Link zum Volltext
Quelle
Wiley Online Library - AutoHoldings Journals
Beschreibungen/Notizen
  • The reduction in electronic recombination losses by the passivation of surfaces is a key factor enabling high‐efficiency solar cells. Here a strategy to passivate surface trap states of TiO2 films used as cathode interlayers in organic photovoltaics (OPVs) through applying alumina (Al2O3) or zirconia (ZrO2) insulating nanolayers by thermal atomic layer deposition (ALD) is investigated. The results suggest that the surface traps in TiO2 are oxygen vacancies, which cause undesirable recombination and high electron extraction barrier, reducing the open‐circuit voltage and the short‐circuit current of the complete OPV device. It is found that the ALD metal oxides enable excellent passivation of the TiO2 surface followed by a downward shift of the conduction band minimum. OPV devices based on different photoactive layers and using the passivated TiO2 electron extraction layers exhibit a significant enhancement of more than 30% in their power conversion efficiencies compared to their reference devices without the insulating metal oxide nanolayers. This is a result of significant suppression of charge recombination and enhanced electron extraction rates at the TiO2/ALD metal oxide/organic interface. Effective passivation of trap states present at the surface of TiO2 films used as cathode interlayers in organic photovoltaics (OPVs) is obtained by applying thin Al2O3 or ZrO2 coatings using atomic layer deposition. OPV devices with the passivated TiO2 interlayers exhibit a significant enhancement of more than 30% in power conversion efficiencies compared to reference devices.
Sprache
Englisch
Identifikatoren
ISSN: 1614-6832
eISSN: 1614-6840
DOI: 10.1002/aenm.201400214
Titel-ID: cdi_proquest_journals_1617154633

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