Details

Autor(en) / Beteiligte

• Amari, Houari
• Ross, Ian M.
• Wang, Tao
• Walther, Thomas

Titel

Characterization of InGaN/GaN epitaxial layers by aberration corrected TEM/STEM

Ist Teil von

• Physica status solidi. C, 2012-03, Vol.9 (3-4), p.546-549

Ort / Verlag

Berlin: WILEY-VCH Verlag

Erscheinungsjahr

2012

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• In this study, the thickness, interface quality, and elemental composition of InGaN/GaN epitaxial layers are investigated. Samples were grown by Metal‐Organic Chemical Vapour Deposition (MOCVD) on sapphire (0001) substrates. The structure was designed to form In0.1Ga0.9N quantum wells (QWs) with thicknesses decreasing from 8 nm to 0.25 nm embedded between 10 nm GaN barriers. Scanning transmission electron microscopy (S)TEM, energy‐dispersive X‐ray spectroscopy (EDXS) and electron energy loss spectroscopy (EELS) have been applied using both a JEOL 2010F field‐emission gun (FEG) TEM/STEM microscope and the newly developed spherical aberration‐corrected JEOL R005 cold FEG (S)TEM. The peak indium concentration of the widest QWs was determined to lie between 0.12 and 0.15 (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)