Details

Autor(en) / Beteiligte

• Sadakuni, Shun
• Murata, Junji
• Sano, Yasuhisa
• Yagi, Keita
• Okamoto, Takeshi
• Tachibana, Kazuma
• Asano, Hiroya
• Yamauchi, Kazuto

Titel

Atomically controlled chemical polishing of GaN using platinum and hydrofluoric acid

Ist Teil von

• Physica status solidi. C, 2012-03, Vol.9 (3-4), p.433-435

Ort / Verlag

Berlin: WILEY-VCH Verlag

Erscheinungsjahr

2012

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• We have developed a novel planarization method called catalyst‐referred etching (CARE), which utilizes platinum as a catalyst that is immersed in hydrofluoric (HF) acid solution. In this process, chemical etching occurs only near the surface of a platinum plate that has a flat surface. The protrusions on a GaN substrate that is in contact with the surface of the catalyst plate are the only parts that are removed by the platinum and HF solution. The surface is therefore flattened without damaging the crystal. Morphological characterization showed that CARE produced smooth surfaces with single bilayer atomic terracing throughout the substrate. Cross‐sectional transmission electron microscope observations revealed that the surface was atomically flat with no subsurface damage (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)