Details

Autor(en) / Beteiligte

• Lim, T. C.
• Williams, B. W.
• Finney, S. J.
• Palmer, P. R.

Titel

Series-Connected IGBTs Using Active Voltage Control Technique

Ist Teil von

• IEEE transactions on power electronics, 2013-08, Vol.28 (8), p.4083-4103

Ort / Verlag

New York, NY: IEEE

Erscheinungsjahr

2013

Quelle

IEEE Electronic Library Online

Beschreibungen/Notizen

• With series insulated-gate bipolar transistor (IGBT) operation, well-matched gate drives will not ensure balanced dynamic voltage sharing between the switching devices. Rather, it is IGBT parasitic capacitances, mainly gate-to-collector capacitance C gc , that dominate transient voltage sharing. As C gc is collector voltage dependant and is significantly larger during the initial turn-off transition, it dominates IGBT dynamic voltage sharing. This paper presents an active control technique for series-connected IGBTs that allows their dynamic voltage transition dV ce /dt to adaptively vary. Both switch ON and OFF transitions are controlled to follow a predefined dV ce /dt. Switching losses associated with this technique are minimized by the adaptive dv/dt control technique incorporated into the design. A detailed description of the control circuits is presented in this paper. Experimental results with up to three series devices in a single-ended dc chopper circuit, operating at various low voltage and current levels, are used to illustrate the performance of the proposed technique.