Details

Autor(en) / Beteiligte

• Place, S.
• Carrere, J-P
• Allegret, S.
• Magnan, P.
• Goiffon, V.
• Roy, F.

Titel

Rad Tolerant CMOS Image Sensor Based on Hole Collection 4T Pixel Pinned Photodiode

Ist Teil von

• IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.2888-2893

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2012

Link zum Volltext

• IEEE_Xplore

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• 1.4μm pixel pitch CMOS Image sensors based on hole collection pinned photodiode (HPD) have been irradiated with 60 Co source. The HPD sensors exhibit much lower dark current degradation than equivalent commercial sensors using an Electron collection Pinned Photodiode (EPD). This hardness improvement is mainly attributed to carrier accumulation near the interfaces induced by the generated positive charges in dielectrics. The pre-eminence of this image sensor based on hole collection pinned photodiode architectures in ionizing environments is demonstrated.