Details

Autor(en) / Beteiligte

• RUXI WANG
• BOROYEVICH, Dushan
• PUQI NING
• ZHIQIANG WANG
• FEI WANG
• MATTAVELLI, Paolo
• NGO, Khai D. T
• RAJASHEKARA, Kaushik

Titel

A High-Temperature SiC Three-Phase AC-DC Converter Design for > 100 °C Ambient Temperature

Ist Teil von

• IEEE transactions on power electronics, 2013, Vol.28 (1), p.555-572

Ort / Verlag

New York, NY: Institute of Electrical and Electronics Engineers

Erscheinungsjahr

2013

Quelle

IEEE Xplore

Beschreibungen/Notizen

• High-temperature (HT) converters have gained importance in industrial applications where the converters operate in a harsh environment, such as in hybrid electrical vehicles, aviation, and deep-earth petroleum exploration. These environments require the converter to have not only HT semiconductor devices (made of SiC or GaN), but also reliable HT packaging, HT gate drives, and HT control electronics. This paper describes a detailed design process for an HT SiC three-phase PWM rectifier that can operate at ambient temperatures above $100 ^{circ}$C. SiC HT planar structure packaging is designed for the main semiconductor devices, and an edge-triggered HT gate drive is also proposed to drive the designed power module. The system is designed to make use of available HT components, including the passive components, silicon-on-insulator chips, and auxiliary components. Finally, a 1.4 kW lab prototype is tested in a harsh environment for verification. [PUBLICATION ABSTRACT]