Details

Autor(en) / Beteiligte

• Liu, W. J
• Sun, X. W
• Tran, X. A
• Fang, Z
• Wang, Z. R
• Wang, F
• Wu, L
• Zhang, J. F
• Wei, J
• Zhu, H. L
• Yu, H. Y

Titel

[Formula Omitted] Shift in Single-Layer Graphene Field-Effect Transistors and Its Correlation With Raman Inspection

Ist Teil von

• IEEE transactions on device and materials reliability, 2012-06, Vol.12 (2), p.478

Ort / Verlag

New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)

Erscheinungsjahr

2012

Quelle

IEEE/IET Electronic Library

Beschreibungen/Notizen

• Raman measurement is carried out to understand [Formula Omitted] shift in single-layer graphene field-effect transistors (GFETs). The G (2D) peak shift in Raman spectra is correlated to the corresponding [Formula Omitted] during stress and recovery phases. A blue (red) shift of G and 2D peaks is seen during stress (recovery) phase, indicating the corresponding trapping (detrapping) effects in the graphene device. It is interesting to note that, after forming gas annealing [Formula Omitted], the defects can be generated in graphene (evidenced by D peak of Raman spectra), leading to the increased [Formula Omitted] for both negative bias temperature instability and positive bias temperature instability in single-layer GFETs.