Solid state communications, 2013, Vol.175-76, p.119-122
2013
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Details
- Autor(en) / Beteiligte
- Titel
- Observation of Quantum Hall Effect and weak localization in p-type bilayer epitaxial graphene on SiC(0001): Graphene V: Recent Advances in Studies of Graphene and Graphene analogues
- Ist Teil von
- Solid state communications, 2013, Vol.175-76, p.119-122
- Ort / Verlag
- Kidlington: Elsevier
- Erscheinungsjahr
- 2013
- Quelle
- Alma/SFX Local Collection
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0038-1098eISSN: 1879-2766Titel-ID: cdi_pascalfrancis_primary_28052199
- Format
- –
- Schlagworte
- Condensed matter: electronic structure, electrical, magnetic, and optical properties, Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures, Electronic transport in interface structures, Electronic transport in multilayers, nanoscale materials and structures, Exact sciences and technology, Localization effects (anderson or weak localization), Physics, Quantum hall effect (including fractional), Surface and interface electron states