Details

Autor(en) / Beteiligte

• Zhen Zhang
• Koswatta, S. O.
• Bedell, S. W.
• Baraskar, A.
• Guillorn, M.
• Engelmann, S. U.
• Yu Zhu
• Gonsalves, J.
• Pyzyna, A.
• Hopstaken, M.
• Witt, C.
• Li Yang
• Fei Liu
• Newbury, J.
• Wei Song
• Cabral, C.
• Lofaro, M.
• Ozcan, A. S.
• Raymond, M.
• Lavoie, C.
• Sleight, J. W.
• Rodbell, K. P.
• Solomon, P. M.

Titel

Ultra Low Contact Resistivities for CMOS Beyond 10-nm Node

Ist Teil von

• IEEE electron device letters, 2013-06, Vol.34 (6), p.723-725

Ort / Verlag

New York, NY: IEEE

Erscheinungsjahr

2013

Quelle

IEEE Xplore

Beschreibungen/Notizen

• Contact resistances are directly measured for contacts with sizes from 25 to 330 nm using e-beam based nano-TLM devices. Record low contact resistivities ~1.5 × 10 -9 Ω· cm 2 are extracted from Ni(Pt) silicide contacts on in situ boron-doped Si 0.7 Ge 0.3 with a chemical boron-doping density of 2 × 10 21 /cm 3 . This is very promising for pMOS applications beyond the 10-nm node. A clear dependence of contact resistance on the silicide thickness has also been found.