IEEE electron device letters, 2012-10, Vol.33 (10), p.1432-1434
2012
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Details
- Autor(en) / Beteiligte
- Titel
- A Novel Drain-Extended FinFET Device for High-Voltage High-Speed Applications
- Ist Teil von
- IEEE electron device letters, 2012-10, Vol.33 (10), p.1432-1434
- Ort / Verlag
- New York, NY: IEEE
- Erscheinungsjahr
- 2012
- Quelle
- IEL
- Beschreibungen/Notizen
- A novel drain-extended FinFET device is proposed in this letter for high-voltage and high-speed applications. A 2 × better R ON versus V BD tradeoff is shown from technology computer-aided design simulations for the proposed device, when compared with a conventional device option. Moreover, a device design and optimization guideline has been provided for the proposed device.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0741-3106eISSN: 1558-0563DOI: 10.1109/LED.2012.2206791Titel-ID: cdi_pascalfrancis_primary_26443143
- Format
- –
- Schlagworte
- Applied sciences, CMOS integrated circuits, Design. Technologies. Operation analysis. Testing, Drain extended, Electronics, Exact sciences and technology, FinFET, FinFETs, high voltage (HV), Integrated circuits, Logic gates, Optimization, P-n junctions, Performance evaluation, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, System-on-a-chip, system-on-a-chip (SoC), Transistors