Details

Autor(en) / Beteiligte

• Tessmann, A.
• Leuther, A.
• Hurm, V.
• Kallfass, I.
• Massler, H.
• Kuri, M.
• Riessle, M.
• Zink, M.
• Loesch, R.
• Seelmann-Eggebert, M.
• Schlechtweg, M.
• Ambacher, O.

Titel

Metamorphic HEMT MMICs and Modules Operating Between 300 and 500 GHz

Ist Teil von

• IEEE journal of solid-state circuits, 2011-10, Vol.46 (10), p.2193-2202

Ort / Verlag

New York, NY: IEEE

Erscheinungsjahr

2011

Link zum Volltext

• Volltext

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• In this paper, we present the development of submillimeter-wave monolithic integrated circuits (S-MMICs) and modules for use in next-generation sensors and high-data-rate wireless communication systems, operating in the 300-500-GHz frequency regime. A four-stage 460-GHz amplifier MMIC and a 440-GHz class-B frequency doubler circuit have been successfully realized using our 35-nm InAlAs/InGaAs-based metamorphic high-electron mobility transistor (mHEMT) technology in combination with grounded coplanar circuit topology (GCPW). Additionally, a 500-GHz amplifier MMIC was fabricated using a more advanced 20-nm mHEMT technology. To package the submillimeter-wave circuits, a set of waveguide-to-microstrip transitions has been fabricated on both 50-μm-thick quartz and GaAs substrates, covering the frequency range between 220 and 500 GHz. The E-plane probes were integrated in a four-stage 20-nm cascode amplifier circuit to realize a full H -band (220 to 325 GHz) S-MMIC amplifier module with monolithically integrated waveguide transitions.