IEEE transactions on electron devices, 2011-07, Vol.58 (7), p.1855-1863
2011
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Details
- Autor(en) / Beteiligte
- Titel
- A Tunnel FET for VDD Scaling Below 0.6 V With a CMOS-Comparable Performance
- Ist Teil von
- IEEE transactions on electron devices, 2011-07, Vol.58 (7), p.1855-1863
- Ort / Verlag
- New York, NY: Institute of Electrical and Electronics Engineers
- Erscheinungsjahr
- 2011
- Quelle
- IEEE/IET Electronic Library (IEL)
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0018-9383eISSN: 1557-9646DOI: 10.1109/TED.2011.2140322Titel-ID: cdi_pascalfrancis_primary_24327630
- Format
- –
- Schlagworte
- Applied sciences, Compound structure devices, Design. Technologies. Operation analysis. Testing, Electronic equipment and fabrication. Passive components, printed wiring boards, connectics, Electronics, Exact sciences and technology, Integrated circuits, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Transistors