1997 21st International Conference on Microelectronics. Proceedings, 1997, Vol.1, p.185-188 vol.1
1997
Volltextzugriff (PDF)
Details
- Autor(en) / Beteiligte
- Titel
- Determination of transport parameters in heavily doped n-type InP
- Ist Teil von
- 1997 21st International Conference on Microelectronics. Proceedings, 1997, Vol.1, p.185-188 vol.1
- Ort / Verlag
- New York NY: IEEE
- Erscheinungsjahr
- 1997
- Quelle
- IEEE Electronic Library Online
- Beschreibungen/Notizen
- The transport characteristics of heavily doped n-type InP was calculated for free electron concentrations from 10/sup 17/ to 10/sup 21/ cm/sup -3/. The nonparabolic energy dispersion according to the kp model was taken into account. Detailed physical model with all important scattering mechanisms was included. The iterative method was used for determination the drift and Hall electron mobilities. The influence of upper minima was taken by including density of states effective mass. Calculations are performed at room temperature (300 K). Very good agreement between calculated results and available experimental data was obtained. Approximate relation for electron mobility was given, which may be used for simulation.
- Sprache
- Englisch
- Identifikatoren
- ISBN: 078033664X, 9780780336643DOI: 10.1109/ICMEL.1997.625211Titel-ID: cdi_pascalfrancis_primary_2279635
- Format
- –
- Schlagworte
- Condensed matter: electronic structure, electrical, magnetic, and optical properties, Conducting materials, Conductivity phenomena in semiconductors and insulators, Doping, Effective mass, Electron mobility, Electronic transport in condensed matter, Exact sciences and technology, Gallium arsenide, Indium phosphide, Low-field transport and mobility, piezoresistance, Optical scattering, Photodetectors, Physics, Semiconductor materials, Thermal conductivity