Sie befinden Sich nicht im Netzwerk der Universität Paderborn. Der Zugriff auf elektronische Ressourcen ist gegebenenfalls nur via VPN oder Shibboleth (DFN-AAI) möglich.
mehr Informationen...
Quantum modeling of semiconductor gain materials and vertical-external-cavity surface-emitting laser systems
Ist Teil von
Physica status solidi. B. Basic research, 2010-04, Vol.247 (4), p.789-808
Ort / Verlag
Berlin: WILEY-VCH Verlag
Erscheinungsjahr
2010
Link zum Volltext
Quelle
Wiley-Blackwell Journals
Beschreibungen/Notizen
This article gives an overview of the microscopic theory used to quantitatively model a wide range of semiconductor laser gain materials. As a snapshot of the current state of research, applications to a variety of actual quantum‐well systems are presented. Detailed theory–experiment comparisons are shown and it is analyzed how the theory can be used to extract poorly known material parameters. The intrinsic laser loss processes due to radiative and nonradiative Auger recombination are evaluated microscopically. The results are used for realistic simulations of vertical‐external‐cavity surface‐emitting laser systems. To account for nonequilibrium effects, a simplified model is presented using pre‐computed microscopic scattering and dephasing rates. Prominent deviations from quasi‐equilibrium carrier distributions are obtained under strong in‐well pumping conditions.
A microscopic theory is used to model the optical properties of semiconductor laser materials and modern devices. Typically, these devices are structured on the nanoscale such that any quantitative modeling requires a consistent quantum mechanical theory. In this article, the authors show how such a many‐particle approach can be used to compute the laser gain, absorption, photoluminescence as well as the radiative and Auger recombination processes. The predictive power of this modeling is demonstrated by detailed comparisons to quantitative experiments. In particular, VECSEL systems are analyzed. It is shown that systematic design studies allow for device optimization for a wide variety of different application conditions, such as high output power, emission at a particular wavelength, or low threshold.