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Simulation of the Carrier Trapping Effect in a Schottky CdTe Detector by Considering a Nonuniform Electric Field
Ist Teil von
Journal of nuclear science and technology, 2009-11, Vol.46 (11), p.1032-1037
Ort / Verlag
Tokyo: Taylor & Francis Group
Erscheinungsjahr
2009
Quelle
Taylor & Francis Journals Auto-Holdings Collection
Beschreibungen/Notizen
In order to simulate the low-energy tail in the response function of a Schottky CdTe detector, which is a high-resolution room temperature X- or γ-ray spectrometer, we introduced the effect of a nonuniform electric field within the detector to the response function by a Monte Carlo calculation using the EGS5 code. The simulated response functions were compared with measurements for γ-rays from
109
Cd,
241
Am,
133
Ba, and
57
Co sources. The present method successfully reproduced the low-energy tail due to the charge carrier trapping effect, while the conventional model assuming a uniform electric field underestimated the low-energy tail significantly, particularly for higher energy γ-rays.