Details

Autor(en) / Beteiligte

• Bui Dinh Tu, Bui Dinh Tu
• Le Viet Cuong, Le Viet Cuong
• Tran Quang Hung, Tran Quang Hung
• Do Thi Huong Giang, Do Thi Huong Giang
• Tran Mau Danh, Tran Mau Danh
• Nguyen Huu Duc, Nguyen Huu Duc
• CheolGi Kim, CheolGi Kim

Titel

Optimization of Spin-Valve Structure NiFe/Cu/NiFe/IrMn for Planar Hall Effect Based Biochips

Ist Teil von

• IEEE transactions on magnetics, 2009-06, Vol.45 (6), p.2378-2382

Ort / Verlag

New York, NY: IEEE

Erscheinungsjahr

2009

Quelle

IEEE Electronic Library Online

Beschreibungen/Notizen

• This paper deals with the planar Hall effect (PHE) of Ta(5)/NiFe(t F )/Cu(1.2)/NiFe(t P )/IrMn(15)/Ta(5) (nm) spin-valve structures. Experimental investigations are performed for 50 mumtimes50 mum junctions with various thicknesses of free layer (t F = 4, 8, 10, 12, 16, 26 nm) and pinned layer (t P = 1, 2, 6, 8, 9, 12 nm). The results show that the thicker free layers, the higher PHE signal is observed. In addition, the thicker pinned layers lower PHE signal. The highest PHE sensitivity S of 196 muV/(kA/m) is obtained in the spin-valve configuration with t F = 26 nm and t P = 1 nm. The results are discussed in terms of the spin twist as well as to the coherent rotation of the magnetization in the individual ferromagnetic layers. This optimization is rather promising for the spintronic biochip developments.