Details

Autor(en) / Beteiligte

• Tan, L.J.J.
• Ng, J.S.
• Tan, C.H.
• David, J.P.R.

Titel

Avalanche Noise Characteristics in Submicron InP Diodes

Ist Teil von

• IEEE journal of quantum electronics, 2008-04, Vol.44 (4), p.378-382

Ort / Verlag

New York, NY: IEEE

Erscheinungsjahr

2008

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• We report excess noise factors measured on a series of InP diodes with varying avalanche region thickness, covering a wide electric field range from 180 to 850 kV/cm. The increased significance of dead space in diodes with thin avalanche region thickness decreases the excess noise. An excess noise factor of F = 3.5 at multiplication factor M = 10 was measured, the lowest value reported so far for InP. The electric field dependence of impact ionization coefficients and threshold energies in InP have been determined using a non-local model to take into account the dead space effects. This work suggests that further optimization of InP separate absorption multiplication avalanche photodiodes (SAM APDs) could result in a noise performance comparable to InAlAs SAM APDs.