Details

Autor(en) / Beteiligte

• Jin, K X
• Zhao, S G
• Tan, X Y
• Chen, C L

Titel

Photoinduced effect on carrier transport properties in La0.7Sr0.3MnO3/Si heterostructure

Ist Teil von

• Journal of physics. D, Applied physics, 2008-02, Vol.41 (4), p.045105-045105 (4)

Ort / Verlag

Bristol: IOP Publishing

Erscheinungsjahr

2008

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The photoinduced effect on carrier transport properties has been investigated in the La0.7Sr0.3MnO3/Si heterostructure prepared by the pulsed laser deposition method. A giant photoinduced relative change in the resistance of about 6783% in the current-perpendicular-to-plane (CPP) geometry of the heterostructure has been observed when it is irradiated by a 532 nm laser at T = 270 K. The rising time of about 100 mus in the CPP geometry of the heterostructure under modulated laser irradiation of 200 mus duration seems to be independent of temperature. This provides an innovation for potential application in functional optical and electrical devices.